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Science & Tech: Samsung Plans Record Breaking 400 Layer Nand Chip That

SCIENCE & TECH: Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs

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  • Samsung to release 400-layer NAND chip for AI data centers
  • New BV NAND tech boosts density and minimizes heat buildup
  • Plans for 1,000-layer NAND by 2030 to expand capacity

Samsung is working to launch a record-breaking 400-layer vertical NAND flash chip by 2026, reports have claimed.

A report by the Korea Economic Daily says Samsung’s Device Solutions (DS) division aims to advance the NAND flash market with its cutting-edge V10 NAND, designed to meet surging demand in AI data centers.



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